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sa620 low voltage lna, mixer and vco 1ghz product data supersedes data of 1993 dec 15 2004 dec 14 integrated circuits
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2 2004 dec 14 description the sa620 is a combined rf amplifier, vco with tracking bandpass filter and mixer designed for high-performance low-power communication systems from 800-1200mhz. the low-noise preamplifier has a 1.6db noise figure at 900mhz with 11.5db gain and an ip3 intercept of -3dbm at the input. the gain is stabilized by on-chip compensation to vary less than 0.2db over -40 to +85 c temperature range. the wide-dynamic-range mixer has an 9db noise figure and ip3 of 6dbm at the input at 900mhz. an external lo can be used in place of the internal vco for improved mixer input ip3 and a 3ma reduction in current. the chip incorporates a through-mode option so the rf amplifier can be disabled and replaced by an attenuator (s 21 = 7.5db). this is useful for improving the overall dynamic range of the receiver when in an overload situation. the nominal current drawn from a single 3v supply is 10.4ma and 7.2ma in the thru-mode. additionally, the vco and mixer can be powered down to further reduce the supply current to 1.2ma. features ? low current consumption: 10.4ma nominal, 7.2ma with thru-mode activated ? outstanding noise figure: 1.6db for the amplifier and 9db for the mixer at 900mhz ? excellent gain stability versus temperature and supply voltage ? switchable overload capability ? independent lna, mixer and vco power down capability ? internal vco automatic leveling loop ? monotonic vco frequency vs control voltage pin configuration dk package 1 2 3 4 5 6 7 8 9 10 11 12 13 14 20 19 18 17 16 15 v cc lna gnd lna out lna bias mixer in mixer gnd mixer bypass mixer out osc gnd vco out lna enable lna gnd lna in lna gnd lna gnd osc gnd mixer pwrdn osc pwrdn osc1 osc2 sr00114 figure 1. pin configuration applications ? 900mhz cellular front-end ? 900mhz cordless front-end ? spread spectrum receivers ? rf data links ? uhf frequency conversion ? portable radio ordering information description temperature range order code dwg # 20-pin plastic shrink small outline package (surface-mount, ssop) -40 to +85 c SA620DK sot266-1 block diagram 4 3 2 15 20 19 18 17 16 7 610 9 8 15 14 13 12 11 mixer osc pwrdn osc1 osc2 v cc lna lna bias mixer in mixer gnd mixer out osc gnd vco out lna lo vco rf if lna enable lna gnd lna in lna osc gnd automatic leveling loop tracking bandpass filter gnd lna out gnd lna gnd pwrdn mixer bypass sr00115 figure 2. block diagram
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2004 dec 14 3 absolute maximum ratings symbol parameter rating units v cc supply voltage 1 -0.3 to +6 v v in voltage applied to any other pin -0.3 to (v cc + 0.3) v p d power dissipation, t a = 25 c (still air) 2 20-pin plastic ssop 980 mw t jmax maximum operating junction temperature 150 c p max maximum power input/output +20 dbm t stg storage temperature range 65 to +150 c note: 1. transients exceeding 8v on v cc pin may damage product. 2. maximum dissipation is determined by the operating ambient temperature and the thermal resistance, q ja : 20-pin ssop = 110 c/w recommended operating conditions symbol parameter rating units v cc supply voltage 2.7 to 5.5 v t a operating ambient temperature range -40 to +85 c t j operating junction temperature -40 to +105 c dc electrical characteristics v cc = +3v, t a = 25 c; unless otherwise stated. symbol parameter test conditions limits units symbol parameter test conditions min typ max units lna enable input high 10.4 ma lna enable input low 7.2 ma i cc supply current vco power-down input low 7.4 ma mixer power-down input low 7.4 ma full chip power-down 1.2 ma v t enable logic threshold voltage no tag 1.2 1.5 1.8 v v ih logic 1 level rf amp on 2.0 v cc v v il logic 0 level rf amp off 0.3 0.8 v i il enable input current enable = 0.4v -1 0 1 m a i ih enable input current enable = 2.4v -1 0 1 m a v lnain lna input bias voltage enable = 2.4v 0.78 v v lnaou t lna output bias voltage enable = 2.4v 2.1 v v b lna bias voltage enable = 2.4v 2.1 v v mxin mixer rf input bias voltage 0.94 v note: 1. the enable input must be connected to a valid logic level for proper operation of the sa620 lna.
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2004 dec 14 4 ac electrical characteristics v cc = +3v, t a = 25 c; enable = +3v; unless otherwise stated. symbol parameter test conditions limits units symbol parameter test conditions -3 s typ +3 s units s 21 amplifier gain 900mhz 10 11.5 13 db s 21 amplifier gain in through mode enable = 0.4v, 900mhz -9 -7.5 -6 db d s 21 / d t gain temperature sensitivity in pwr-dwn mode 900mhz -0.014 db/ c d s 21 / d t gain temperature sensitivity enabled 900mhz 0.003 db/ c d s 21 / d f gain frequency variation 800mhz - 1.2ghz 0.01 db/mhz s 12 amplifier reverse isolation 900mhz -20 db s 11 amplifier input match 1 900mhz -10 db s 22 amplifier output match 1 900mhz -12 db p -1db amplifier input 1db gain compression 900mhz -16 dbm ip3 amplifier input third order intercept 900mhz -4.5 -3 -1.5 dbm nf amplifier noise figure 900mhz 1.3 1.6 1.9 db t on amplifier turn-on time (enable lo hi) see figure 3 50 m s t off amplifier turn-off time (enable hi lo) see figure 3 5 m s vg c mixer voltage conversion gain: r p = r l = 1k w , f s = 0.9ghz, f lo = 0.8ghz, f if = 100mhz 14.5 16 17.5 db pg c mixer power conversion gain: r p = r l = 1k w , f s = 0.9ghz, f lo = 0.8ghz, f if = 100mhz 1.5 3 4.5 db s 11m mixer input match 1 900mhz -10 db nf m mixer ssb noise figure 900mhz 7.5 9 10.5 db p -1db mixer input 1db gain compression 900mhz -13 dbm ip3 m mixer input third order intercept f 2 f 1 = 1mhz, 900mhz -7.5 -6 -4.5 dbm ip 2int mixer input second order intercept 900mhz 12 dbm p rfm-if mixer rf feedthrough 900mhz -20 db p lo-if lo feedthrough to if 900mhz -25 dbm p lo-rfm lo to mixer input feedthrough 900mhz -30 dbm p lo-rf lo to lna input feedthrough 900mhz -45 dbm p vco vco buffer out 900mhz -16 dbm vco frequency range 300 (min) 1200 (max) mhz vco phase noise offset = 60khz -105 dbc/hz note: 1. simple l/c elements are needed to achieve specified return loss.
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2004 dec 14 5 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 lna enable lna gnd lna in lna gnd lna gnd mixer pd osc pd osc1 osc2 vcc lna gnd lna out lna bias mixer in mixer gnd mixer bypass mixer out osc gnd osc gnd vco out lna in c1 c23 c22 l1 56nh c2 1.8pf c3 c4 c6 l3 2.7nh c7 3.3pf d1 smv 1204 - 099 alpha industries r2 r1 c8 gnd 100pf r6 c19 100pf c18 2.2pf lna out c17 100pf mixer in c16 5.6pf c14 1-5pf r = 9k x (v cc 1) v cc c20 100pf c21 c13 12pf l4 150nh c15 r5 c12 10pf mixer out l = 260 mils w = 15 mils vco out c9 100pf r3 c10 100pf v cc 1 m f 0.44 m f/(v cc 1) 0.1 m f 0.1 m f 10 m f 100pf 0.1 m f 0.1 m f (50 w ) v_control (0 to v cc ) v cc sa620 v cc lna enable 51 w (1k w , 83mhz) 10k w 22 w 10k w l = 260 mils w = 15 mils l2 2.7nh c5 3.9pf 4.7nh 535 mils 4.7nh 535 mils 4.7nh 535 mils 4.7nh 535 mils l = 160 mils w = 15 mils c11 1000pf r4 1k w mixer out (50 w , 83mhz) sr00116 figure 3. a complete lna, mixer and vco circuit technology lna impedance match: intrinsic return loss at the input and output ports is 7db and 9db, respectively. with no external matching, the associated lna gain is 10db and the noise figure is 1.4db. however, the return loss can be improved at 900mhz using suggested l/c elements (figure no tag) as the lna is unconditionally stable. noise match: the lna achieves 1.6db noise figure at 900mhz when s 11 = -10db. further improvements in s 11 will slightly increase the nf and s 21 . thru-mode: a series switch can be activated to feed rf signals from lna input to output with an attenuator (s 21 = 7.5db). as a result, the power handling is greatly improved and current consumption is decreased by 3.2ma as well. however, if this mode is not required, c23 and r6 can be deleted. temperature compensation: the lna has a built-in temperature compensation scheme to reduce the gain drift to 0.003db/ c from 40 c to +85 c. supply voltage compensation: unique circuitry provides gain stabilization over wide supply voltage range. the gain changes no more than 0.5db when v cc increases from 3v to 5v. mixer input match: the mixer is configured for maximum gain and best noise figure. the user needs to supply l/c elements to achieve this performance. mixer bypass: to optimize the ip3 of the mixer input, one must adjust the value of c14 for the given board layout. the value typically lies between 1 and 5pf. once a value if selected, a fixed capacitor can be used. further improvements in mixer ip3 can be achieved by inserting a resistive loss at the mixer input, at the expense of system gain and noise figure. tracking bandpass filter: at the lo input port of the mixer there is a second-order bandpass filter (approx. 50mhz bandwidth) which will track the vco center frequency. the result is the elimination of low frequency noise injected into the mixer lo port without the need for an external lo filter. power down: the mixer can be disabled by connecting pin 7 to ground. if a schottky diode is connected between pin 1 (cathode) and pin 7 (anode), the lna disable signal will control both lna and mixer simultaneously when the mixer is disabled, 3ma is saved. test port: resistor r5 can be substituted with an external test port of 50 w input impedance. since r5 and mixer out have the same output power, the result is a direct power gain measurement. vco automatic leveling loop: an on-chip detector and loop amplifier will adjust vco bias current to regulate the vco amplitude regardless of the q-factor (>10) of the resonator and varactor diode. however, the real current reduction will not occur until the vco frequency falls below 500mhz. for a typical resonator the steady-state current is 3ma at 800mhz. buffered vco output: the vco out (pin 11) signal can drive an external prescaler directly (see also the philips sa7025 low voltage, fractional-n synthesizer). the extracted signal levels need to be limited to 16dbm or less to maintain mixer iip3.
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2004 dec 14 6 phase noise: if close-in phase noise is not critical, or if an external synthesizer is used, c4 (pin 8) can be decreased to a lower value. power-down: the vco can be disabled by connecting pin 8 to ground. if a schottky diode is connected between pin 1 (cathode) and pin 8 (anode), the lna disable signal will control both lna and vco simultaneously. when the vco is disabled, 3ma is saved. typical performance characteristics ch1 s 11 1 u fs 4: 30.707 w -24.89 w 5.86 pf 1100.000 000 mhz start 800.000 000 mhz stop 1200.000 000 mhz 1: 2: 3: 33.184 w -39.105 w 800 mhz 31.879 w -33.66 w 900 mhz 30.594 w -28.695 w 1 ghz ch1 s 22 1 u fs 4: 39.811 w -22.93 w 6.31 pf start 800.000 000 mhz stop 1200.000 000 mhz 1: 2: 3: 48.164 w -35.754 w 800 mhz 44.574 w -31.246 w 900 mhz 42.068 w -25.799 w 1 ghz 1100.000 000 mhz sr00117 figure 4. lna input and output match (at device pin)
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2004 dec 14 7 typical performance characteristics (continued) ch1 s 12 100 mu fs 4: 92.09 mu -82.944 1100.000 000 mhz start 800.000 000 mhz stop 1200.000 000 mhz 1: 2: 3: 77.911 mu -41.727 800 mhz 84.28 mu -55.909 900 mhz 89.053 mu -70.55 1 ghz ch1 s 21 4 u fs 4: 2.7788 u -60.419 1100.000 000 mhz start 800.000 000 mhz stop 1200.000 000 mhz 1: 2: 3: 3.8929u -2.5227 800 mhz 3.3016u -22.365 900 mhz 3.0718u -41.955 1 ghz sr00118 figure 5. lna transmission and isolation characteristics (at device pin)
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2004 dec 14 8 typical performance characteristics (continued) ch1 s 11 1 u fs 4: 8.7959 w 12.241 w 1.7711 nh 1100.000 000 mhz start 800.000 000 mhz stop 1200.000 000 mhz 1: 2: 3: 7.2375 w 5.1895 w 800 mhz 7.8293 w 7.6104 w 900 mhz 8.1147 w 9.9258 w 1 ghz sr00119 figure 6. mixer rf input match (at device pin)
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2004 dec 14 9 typical performance characteristics (continued) sr00120 figure 7. typical performance characteristics (cont.)
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2004 dec 14 10 typical performance characteristics (continued) lna ip3 (db) 4.00 2.5 3 3.5 4 4.5 5 5.5 v cc (v) lna ip3 (enabled) vs. supply voltage 2.00 0.00 -2.00 -4.00 -6.00 -8.00 -10.00 -40 25 85 14.00 11.00 8.00 5.00 2.5 3 3.5 4 4.5 5 5.5 v cc (v) lna gain (enabled) vs. supply voltage lna gain (db) lna nf (db) 2.50 2.5 3 3.5 4 4.5 5 5.5 v cc (v) lna noise figure (enabled) vs. supply voltage 2.00 1.50 1.00 0.50 0.00 lna gain (disabled) vs. supply voltage -40 25 85 lna gain (db) 2.5 3 3.5 4 4.5 5 5.5 v cc (v) 0.00 -5.00 -10.00 -15.00 mixer nf (db) 12.0 2.5 3 3.5 4 4.5 5 5.5 v cc (v) mixer noise figure vs. supply voltage 11.0 10.0 9.0 8.0 7.0 6.0 mixer gain (db) 3.5 -40 25 85 2.5 3 3.5 4 4.5 5 5.5 3.0 2.5 2.0 1.5 1.0 0.5 v cc (v) mixer power gain vs. supply voltage 0.0 lo to mixer in (dbm) -30 -31 -32 -33 -34 -35 -36 -37 -38 -39 -40 2.5 3 3.5 4 4.5 5 5.5 v cc (v) lo to mixer in leakage vs. supply voltage lo to mixer in (dbm) -40 -40 25 85 -41 -42 -43 -44 -45 -46 -47 -48 -49 -50 2.5 3 3.5 4 4.5 5 5.5 v cc (v) lo to rf in leakage vs. supply voltage temperature ( c) temperature ( c) temperature ( c) temperature ( c) sr00121 figure 8. typical performance characteristics (cont.)
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2004 dec 14 11 typical performance characteristics (continued) lo to if (dbm) -25 v cc (v) -40 25 85 -26 -27 -28 -29 -30 -31 -32 -33 -34 -35 2.5 3 3.5 4 4.5 5 5.5 lo to if leakage vs. supply voltage rf feedthrough (db) -15 -16 -17 -18 -19 -20 -21 -22 -23 -24 -25 2.5 3 3.5 4 4.5 5 5.5 v cc (v) mixer rf feedthrough leakage vs. supply voltage vco out (dbm) -10 -11 -12 -13 -14 -15 -16 -17 -18 -19 -20 2.5 3 3.5 4 4.5 5 5.5 v cc (v) -40 25 85 vco output power vs. supply voltage temperature ( c) temperature ( c) sr00122 figure 9. typical performance characteristics (cont.)
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2004 dec 14 12 sr00123 figure 10. board layout (not actual size)
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2004 dec 14 13 ssop20: plastic shrink small outline package; 20 leads; body width 4.4 mm sot266-1
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2004 dec 14 14 revision history rev date description _2 20041214 product data (9397 750 14448); supersedes sa620 of 15 dec 1993. modifications: ? added package outline and legal information. _1 19931215 product specification
philips semiconductors product data sa620 1ghz low voltage lna, mixer and vco 2004 dec 14 15 definitions short-form specification e the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed i nformation see the relevant data sheet or data handbook. limiting values definition e limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the l imiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any o ther conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affec t device reliability. application information e applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors ma ke no representation or warranty that such applications will be suitable for the specified use without further testing or modificatio n. disclaimers life support e these products are not designed for use in life support appliances, devices, or systems where malfunction of these products ca n reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applica tions do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes e philips semiconductors reserves the right to make changes in the productseincluding circuits, standard cells, and/or softwaree described or contained herein in order to improve design and/or performance. when the product is in full production (status `production') , relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for th e use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranti es that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . ? koninklijke philips electronics n.v. 2004 all rights reserved. printed in u.s.a. date of release: 12-04 document order number: 9397 750 14448

data sheet status [1] objective data preliminary data product data product status [2] [3] development qualification production definitions this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the specification in any manner without notice. this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change notification (cpcn). data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level i ii iii

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